BS170 Datasheet, PDF (6/7 Pages) Motorola, Inc – TMOS FET Switching(N-Channel-Enhancement)

BS 170
Typ. output characteristics
I_D = ƒ(V_DS)
parameter: t_p = 80 µs , T_j = 25 °C
0.70 _{Ptot = 1W}
A
0.60
I_{D 0.55}
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
lkj i _h
V_GS [V]
g^a
2.0
b
2.5
c
3.0
d
3.5
e
4.0
f
f
4.5
g
5.0
e^h
6.0
i
7.0
j
8.0
d^k
9.0
l
10.0
c
0.05
b
0.00
a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
V_DS
Typ. drain-source on-resistance
R_{DS (on)} = ƒ(I_D)
parameter: t_p = 80 µs, T_j = 25 °C
16
a
b
c
d
e
Ω
R_{DS (on)}
12
10
8
6
4
2 ^VGS ^{[V] =}
abcdef
32.05 3.5 4.0 4.5 5.0 6.0
0
ghi j
7.0 8.0 9.0 10.0
0.00 0.10 0.20 0.30 0.40 A
I_D
f
hj
g
i
0.60
Typ. transfer characteristics I_D = f(V_GS)
parameter: t_p = 80 µs
V_DS≥ 2 x I_D x R_DS(on)max
0.75
A
0.65
I_D 0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0 1 2 3 4 5 6 7 8 V 10
V_GS
Typ. forward transconductance g_fs = f (I_D)
parameter: t_p = 80 µs,
V_DS≥2 x I_D x R_DS(on)max
0.30
S
0.26
g_fs 0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.00 0.10 0.20 0.30 0.40 0.50 A 0.65
I_D
Semiconductor Group
6
12/05/1997