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| BS170 Datasheet, PDF (1/7 Pages) Motorola, Inc – TMOS FET Switching(N-Channel-Enhancement) | |||
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BS 170
SIPMOS ® Small-Signal Transistor
⢠N channel
⢠Enhancement mode
⢠Logic Level
⢠VGS(th) = 0.8...2.0V
Type
BS 170
Type
BS 170
VDS
60 V
ID
0.3 A
Ordering Code
Q67000-S076
Pin 1
S
Pin 2
G
RDS(on)
5â¦
Package
TO-92
Marking
BS 170
Tape and Reel Information
E6288
Pin 3
D
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kâ¦
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 25 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Values
Unit
60
V
60
± 14
± 20
A
0.3
1.2
W
0.63
Semiconductor Group
1
12/05/1997
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