BFS483 Datasheet, PDF (6/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA)

BFS 483
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
20
I_C=15mA
dB
0.9GHz
G ¹⁶
14
0.9GHz
12
1.8GHz
10
1.8GHz
8
6
4
2
0
0 1 2 3 4 5 6 7 8 V 10
V_CE
Power Gain G_ma, G_ms = f(f)
V_CE = Parameter
32
dB ^IC^=15mA
28
G
26
24
22
20
18
16
14
12
10
8
8V
1V
6
4
0.7V
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
30
dBm
8V
IP₃ ²⁶
24
5V
22
20
3V
18
2V
16
14
12
1V
10
8
0 4 8 12 16 20 24 28 32 mA 38
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
30
I_C=15mA
dB
S₂₁
20
15
10
8V
5
1V
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHZ 3.5
f
Semiconductor Group
6
Dec-16-1996