BFS483 Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA)

BFS 483
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
1.0
pF
C_cb ^0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
20
dB
G ¹⁶
14
12
10
8V
5V
3V
2V
8
1V
6
0.7V
4
2
0
0 10 20 30 40 50 60 mA 75
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
8
GHZ
f_T
6
8V
5
4
5V
3
3V
2V
2
1V
0.7V
1
0
0 10 20 30 40 50 60 mA 75
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
14
dB
G
10
8
6
4
8V
5V
3V
2V
2
1V
0
0.7V
0 10 20 30 40 50 60 mA 75
I_C
Semiconductor Group
5
Dec-16-1996