BFS482 Datasheet, PDF (6/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.)

BFS 482
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
22
I_C=10mA
dB
G
18
0.9GHz
16
0.9GHz
14
1.8GHz
12
10
1.8GHz
8
6
0 1 2 3 4 5 6 7 8 V 10
V_CE
Power Gain G_ma, G_ms = f(f)
V_CE = Parameter
32 _IC=10mA
dB
G
24
20
16
12
8V
8
1V
0.7V
4
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
28
dBm
8V
IP₃ ²⁴
5V
22
20
3V
18
16
2V
14
12
10
1V
8
6
0
4
8 12 16 20 mA 28
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
28
dB ^IC^=10mA
24
S_{21 22}
20
18
16
14
12
10
8
6
8V
4
1V
0.7V
2
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
6
Dec-16-1996