BFS482 Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA.)

BFS 482
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.50
pF
C_cb ^0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
22
V
24
V_R
dB
G
18
16
14
12
10V
5V
3V
2V
10
1V
8
0.7V
6
0 5 10 15 20 25 30 35 mA 45
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
8.0
GHz
f_T
6.0
5.0
8V
5V
4.0
3V
2V
3.0
1V
2.0
0.7V
1.0
0.0
0 5 10 15 20 25 30 35 mA 45
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
14
dB
G
10
8V
5V
3V
8
2V
6
4
1V
0.7V
2
0
0 5 10 15 20 25 30 35 mA 45
I_C
Semiconductor Group
5
Dec-16-1996