BFS480 Datasheet, PDF (6/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

BFS 480
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
20
I_C=3mA
dB
0.9GHz
G ¹⁶
14
0.9GHz
1.8GHz
12
10
1.8GHz
8
6
4
2
0
0 1 2 3 4 5 6 7 8 V 10
V_CE
Power Gain G_ma, G_ms = f(f)
V_CE = Parameter
30
I_C=3mA
dB
26
G
24
22
20
18
16
14
12
10
8V
8
1V
0.7V
6
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
22
dBm
IP_{3 14}
10
6
1V
2
-2
-6
-10
-14
0
2
4
6
Power Gain |S₂₁|²= f(f)
8V
5V
3V
2V
8 mA 11
I_C
V_CE = Parameter
20
I_C=3mA
dB
G
16
14
12
10
8
8V
6
1V
0.7V
4
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
6
Dec-16-1996