BFS480 Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

BFS 480
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.40
pF
C_cb
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
2
4
6
8
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
22
V
12
V_R
dB
8V
G
2V
18
16
1V
14
0.7V
12
10
8
0
2
4
6
8
mA 12
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
f_T
8
7
6
10V
5V
3V
2V
5
4
1V
0.7V
3
2
1
0
2
4
6
8
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
mA 12
I_C
15
dB
8V
G ¹³
3V
12
2V
11
10
9
1V
8
7
0.7V
6
5
0
2
4
6
8
mA 12
I_C
Semiconductor Group
5
Dec-16-1996