BFR280 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

BFR 280
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.40
pF
C_cb
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
2
4
6
8
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 11
V_R
20
Transition frequency f_T = f (I_C)
V_CE = Parameter
9.5
GHz
8.0
f_T
7.0
6.0
5.0
10V
8V
5V
3V
2V
4.0
1V
3.0
0.7V
2.0
1.0
0.0
0
2
4
6
8
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
mA 11
I_C
13
dB
G
16
10V
3V
3V
dB
G
11
10
10V
5V
3V
2V
14
2V
12
0.7V
10
8
0
2
4
6
8 mA 11
I_C
9
8
1V
7
6
0.7V
5
0
2
4
6
8 mA 11
I_C
Semiconductor Group
6
Dec-11-1996