BFR280 Datasheet, PDF (4/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

BFR 280
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
6.472
fA
BF =
89.888 -
VAF = 25.609 V
IKF =
0.073457 A
NE =
1.6163 -
BR = 20.238 -
VAR = 5.6909 V
IKR = 0.012696 A
NC = 1.0651 -
RB =
15
Ω
RBM = 14.999 Ω
RE =
2.4518 Ω
CJE = 36.218 fF
VJE = 0.70035 V
TF =
11.744 ps
XTF = 0.21585 -
ITF =
6.2179 mA PTF = 0
deg
VJC = 1.1943 V
MJC = 0.30017 -
TR =
2.3693 ns
CJS = 0
fF
MJS = 0
-
XTB = 0
-
XTI = 3
-
FC =
0.96275 -
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
1.0801 -
15.596 fA
0.83403 -
1.409
fA
0.031958 mA
6.989
Ω
0.69773 -
0.2035 V
252.99 fF
0.19188 -
0.75
V
1.11
eV
300
K
Package Equivalent Circuit:
LBI =
0.85
nH
LBO = 0.51
nH
LEI =
0.69
nH
LEO = 0.61
nH
LCI =
0
nH
LCO = 0.49
nH
CBE = 73
fF
CCB = 84
fF
CCE = 165
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-11-1996