BFP193 Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

BFP 193
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
1.0
pF
C_cb ^0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
20
dB
G
16
14
12
10V
5V
3V
2V
10
1V
8
0.7V
6
0 10 20 30 40 50 60 70 mA 85
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
f
8
7
6
5
4
10V
5V
3V
2V
3
1V
0.7V
2
1
0
0 10 20 30 40 50 60 70 mA 85
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
13
dB
11
G
10
9
8
10V
5V
3V
2V
7
6
5
1V
4
3
0.7V
2
1
0
0 10 20 30 40 50 60 70 mA 85
I_C
Semiconductor Group
6
Dec-13-1996