BFP193 Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPN Silicon RF Transistor
• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
• f_T = 8GHz
F = 1.3dB at 900MHz
BFP 193
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFP 193 RCs
Q62702-F1282
1=C 2=E 3=B 4=E
Package
SOT-143
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S ≤ 72 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ¹⁾
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
1) T_S is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
80
10
580
150
- 65 ... + 150
- 65 ... + 150
≤ 135
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-13-1996