BFP182W Datasheet, PDF (6/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

BFP 182W
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.5
C_cb ^pF
0.3
0.2
0.1
0.0
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
24
dB
G
20
18
V
24
V_R
10V
3V
2V
16
14
1V
12
0.7V
10
8
0
5
10
15
mA
25
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
10
GHz
f_T
8
7
6
5
4
3
2
1
0
0
5
10
15
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
18
10V
8V
5V
3V
2V
1V
0.7V
mA
25
I_C
dB
G
10V
5V
14
3V
2V
12
10
8
1V
6
0.7V
4
0
5
10
15
mA
25
I_C
Semiconductor Group
6
Dec-12-1996