BFP182W Datasheet, PDF (4/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

BFP 182W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
4.8499 fA
BF =
84.113 -
VAF = 21.742 V
IKF =
0.14414 A
NE =
0.91624 -
BR = 10.004 -
VAR = 2.2595 V
IKR = 0.039478 A
NC = 0.5641 -
RB =
2.8263 Ω
RBM = 3.4217 Ω
RE =
2.1858 Ω
CJE = 8.8619 fF
VJE = 1.0378 V
TF =
22.72
ps
XTF = 0.43147 -
ITF =
6.5523 mA PTF = 0
deg
VJC = 1.0132 V
MJC = 0.31068 -
TR =
1.7541 ns
CJS = 0
fF
MJS = 0
-
XTB = 0
-
XTI = 3
-
FC =
0.64175 -
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
TNOM
0.56639 -
8.4254 fA
0.54818 -
5.9438 fA
0.071955 mA
1.8159 Ω
0.40796 -
0.34608 V
490.25 fF
0.19281 -
0.75
V
1.11
eV
300
K
Package Equivalent Circuit:
LBI =
0.43
nH
LBO = 0.47
nH
LEI =
0.26
nH
LEO = 0.12
nH
LCI =
0.06
nH
LCO = 0.36
nH
CBE = 68
fF
CCB = 46
fF
CCE = 232
fF
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-12-1996