BFG19S Datasheet, PDF (6/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

BFG 19S
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
14
I_C=70mA
dB
G
10
0.9GHz
0.9GHz
8
1.8GHz
6
1.8GHz
4
2
0
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
V_CE = Parameter
36
I_C=70mA
dB
G
28
24
20
16
12
8
10V
4
2V
1V
0
0.7V
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
40
dBm
IP₃
30
25
20
15
8V
5V
3V
2V
1V
10
0
20
40
60
80 mA 120
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
32
I_C=70mA
dB
S₂₁ ²⁴
20
16
12
8
4
10V
0
2V
1V
-4
0.7V
-8
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
6
Dec-13-1996