BFG19S Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna)

BFG 19S
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
2.6
pF
2.2
C_{cb 2.0}
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
14
dB
G
10
10V
5V
3V
2V
Transition frequency f_T = f (I_C)
V_CE = Parameter
6.0
GHz
f_T ^5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0
20
40
60
80
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
5V
3V
2V
1V
0.7V
mA 120
I_C
10
dB
G
6
10V
5V
3V
2V
8
4
1V
1V
6
2
4
0.7V
2
0
20
40
60
80
mA 120
I_C
Semiconductor Group
5
0
0.7V
-2
0
20
40
60
80 mA 120
I_C
Dec-13-1996