BFG196 Datasheet, PDF (6/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

BFG 196
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
16
I_C=50mA
dB
G
12
0.9GHz
0.9GHz
10
1.8GHz
8
6
1.8GHz
4
2
0
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V
12
V_CE
V_CE = Parameter
32
dB
I_C=50mA
28
G 26
24
22
20
18
16
14
12
10
8
6
10V
4
1V
0.7V
2
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
42
dBm
38
IP_{3 36}
34
32
30
28
26
24
22
20
18
16
14
0
8V
5V
3V
2V
1V
20
40
60
80 mA 120
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
30
dB
S₂₁
20
I_C=50mA
15
10
5
10V
0
1V
0.7V
-5
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Semiconductor Group
6
Dec-13-1996