BFG196 Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna and telecommunications)

BFG 196
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
1.8
pF
C_{cb 1.4}
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
15
dB
G ¹³
12
11
10
9
8
7
6
5
0
10V
5V
3V
2V
1V
0.7V
20
40
60
80
mA 120
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
9
GHz
f_T
7
6
10V
5V
3V
2V
5
4
1V
3
0.7V
2
1
0
0
20
40
60
80
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
mA 120
I_C
10
dB
5V
G
3V
8
2V
7
6
5
1V
4
3
0.7V
2
0
20
40
60
80 mA 120
I_C
Semiconductor Group
5
Dec-13-1996