BFG135A Datasheet, PDF (6/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

BFG 135A
Power Gain G_ma, G_ms = f(V_CE):_____
|S₂₁|² = f(V_CE):---------
f = Parameter
15
dB ^IC^=100mA
13
G 12
11
10
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
Power Gain G_ma, G_ms = f(f)
V_CE = Parameter
30
I_C=100mA
dB
G
0.9GHz
0.9GHz
1.8GHz
V
12
V_CE
20
15
10
10V
5
2V
1V
0.7V
0
0.0 0.5 1.0 1.5 2.0 2.5 GHz 3.5
f
Intermodulation Intercept Point IP₃=f(I_C)
(3rd order, Output, Z_S=Z_L=50Ω)
V_CE = Parameter, f = 900MHz
45
dBm
IP₃
35
30
25
10V 8V
5V
3V
2V
20
1V
15
10
0 20 40 60 80 100 120 mA 160
I_C
Power Gain |S₂₁|²= f(f)
V_CE = Parameter
30
dB
S₂₁
20
I_C=100mA
15
10
5
0.7
1V
10V
2V
0
-5
0.0 0.5 1.0 1.5 2.0 GHz 3.0
f
Semiconductor Group
6
Dec-16-1996