BFG135A Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-distortion broadband output amplifier stages in antenna and telecommunications)

BFG 135A
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
4.0
pF
C_cb
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
Transition frequency f_T = f (I_C)
V_CE = Parameter
7.0
GHz
6.0
f_{T 5.5}
5.0
10V
5V
3V
2V
4.5
4.0
3.5
3.0
1V
2.5
2.0
0.7V
1.5
1.0
0.5
0.0
0 20 40 60 80 100 120 140 mA 170
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
16
dB
G
12
10
10V
5V
3V
2V
8
1V
6
4
0.7V
2
0
0 20 40 60 80 100 120 140 mA 170
I_C
11
dB
G
9
8
7
6
10V
5V
3V
2V
5
4
3
1V
2
1
0.7V
0
0 20 40 60 80 100 120 140 mA 170
I_C
Semiconductor Group
5
Dec-16-1996