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HYM724000GS-50- Datasheet, PDF (5/11 Pages) Siemens Semiconductor Group – 4M x 72-Bit Dynamic RAM Module
HYM724000/10GS-50/-60
4M x 72 ECC- Module
Absolute Maximum Ratings
Operating temperature range ......................................................................................... 0 to + 70 °C
Storage temperature range...................................................................................... – 55 to + 125 °C
Input/output voltage ............................................................................... -0.5 to min (Vcc+0.5, 7.0) V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation................................................................................................................ 12,60 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
TA = 0 to 70 °C; VCC = 5 V ± 10 %
Parameter
Symbol
Input high voltage
VIH
Input low voltage
VIL
Output high voltage (IOUT = – 5 mA)
VOH
Output low voltage (IOUT = 4.2 mA)
VOL
Input leakage current
II(L)
(0 V < VIN < 6.5 V, all other pins = 0 V)
Output leakage current
IO(L)
(DO is disabled, 0 V < VOUT < 5.5 V)
Average VCC supply current:
ICC1
-50 version
-60 version
Limit Values
min.
max.
2.4
5.5
– 1.0
0.8
2.4
–
–
0.4
– 10
10
– 10
10
–
1800
–
1620
(RAS, CAS, address cycling, tRC = tRC min.)
Standby VCC supply current
(RAS = CAS = VIH)
ICC2
–
Average VCC supply current during RAS
ICC3
only refresh cycles:
-50 version
–
-60 version
–
50
1800
16
(RAS cycling, CAS = VIH , tRC = tRC min.)
Unit Test
Condition
V 1)
V 1)
V 1)
V 1)
µA 1)
µA 1)
mA 2) 3) 4)
mA
mA –
mA 2) 4)
mA
Semiconductor Group
5