HYM724000GS-50- Datasheet, PDF (1/11 Pages) Siemens Semiconductor Group – 4M x 72-Bit Dynamic RAM Module

4M × 72-Bit Dynamic RAM Module
(ECC - Module )
HYM 724000GS-50/-60
HYM 724010GS-50/-60
Preliminary Information
• 4 194 304 words by 72-bit ECC - mode organization
• Fast access and cycle time
50 ns access time
90 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
• Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
max. 9900 mW active (-50 version)
max. 8910 mW active (-60 version)
CMOS – 165 mW standby
TTL – 275 mW standby
• CAS-before-RAS refresh, RAS-only-refresh
• 18 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 4 Byte interleave enabled, Dual Address inputs (A0/B0)
• Buffered inputs excepts RAS and DQ
• 168 pin, dual read-out, Single in-Line Memory Module
• Utilizes eighteen 4M × 4 -DRAMs in TSOPII-packages
and four BiCMOS 8-bit buffers/line drivers 74ABT244
• Two versions : HYM 724000GS with TSOPII-components (4.06 mm thickness)
HYM 724010GS with SOJ-components (8.89 mm thickness)
• 4096 refresh cycles / 64 ms with 12 / 10 addressing
• Gold contact pad
• double sided module with 25.35 mm (1000 mil) height
Semiconductor Group
1
11.95