BUZ205 Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode FREDFET)

Typ. drain-source on-resistance
R_{DS (on)} = f (I_D)
parameter: V_GS
BUZ 205
Drain-source on-resistance
R_{DS (on)} = f (T_j)
parameter: I_D = 4.0 A, V_GS = 10 V, (spread)
Typ. forward transconductance
g_fs = f (I_D)
parameter: t_p = 80 µs
Gate threshold voltage
V_{GS (th)} = f (T_j)
parameter: V_GS = V_DS , I_D = 1 mA, (spread)
Semiconductor Group
512