BUZ205 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – SIPMOS Power Transistor (N channel Enhancement mode FREDFET)

SIPMOS^® Power Transistor
q N channel
q Enhancement mode
q FREDFET
BUZ 205
Type
BUZ 205
V_DS
400 V
I_D
6.0 A
R_{DS (on)}
1.0 Ω
Package ¹⁾
TO-220 AB
Maximum Ratings
Parameter
Continuous drain current, T_C = 35 ˚C
Pulsed drain current, T_C = 25 ˚C
Drain-source voltage
Drain-gate voltage, R_GS = 20 kΩ
Gate-source voltage
Power dissipation, T_C = 25 ˚C
Operating and storage temperature range
Symbol
I_D
I_{D puls}
V_DS
V_DGR
V_GS
P_tot
T_j , T_stg
Thermal resistance, chip-case
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R_{th JC}
Ordering Code
C67078-A1401-A2
Values
Unit
6.0
A
24
400
V
400
± 20
75
W
– 55 ... + 150
˚C
≤ 1.67
K/W
E
–
55/150/56
1) See chapter Package Outlines.
Semiconductor Group
508