BUP410 Datasheet, PDF (5/8 Pages) Siemens Semiconductor Group – IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated

BUP 410
Typ. output characteristics
I_C = f (V_CE)
parameter: t_p = 80 µs, T_j = 25 °C
12
A
10
17V
15V
I_C
13V
9
11V
9V
8
7V
7
6
5
4
3
2
1
0
0
1
2
3
V
5
V_CE
Typ. output characteristics
I_C = f (V_CE)
parameter: t_p = 80 µs, T_j = 125 °C
12
A
10
17V
15V
I_C
13V
9
11V
9V
8
7V
7
6
5
4
3
2
1
0
0
1
2
3
V
5
V_CE
Typ. transfer characteristics
I_C = f (V_GE)
parameter: t_p = 80 µs, V_CE = 20 V
12
A
10
I_C
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8 10 V 14
V_GE
Semiconductor Group
5
Jul-31-1996