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BUP410 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated | |||
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BUP 410
IGBT
Preliminary data
⢠Low forward voltage drop
⢠High switching speed
⢠Low tail current
⢠Latch-up free
⢠Avalanche rated
Type
BUP 410
VCE IC
600V 13A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kâ¦
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 90 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
Avalanche energy, single pulse
IC = 6 A, VCC = 50 V, RGE = 25 â¦
L = 500 µH, Tj = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-220 AB
Symbol
VCE
VCGR
VGE
IC
ICpuls
EAS
Ptot
Tj
Tstg
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
C67040-A4424-A2
Values
Unit
600
V
600
± 20
A
13
8
26
16
mJ
9
W
50
-55 ... + 150 °C
-55 ... + 150
Semiconductor Group
1
Jul-31-1996
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