BSS125 Datasheet, PDF (5/7 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode)

BSS 125
Power dissipation
P_tot = ƒ(T_A)
1.2
W
1.0
P_tot
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 20 40 60 80 100 120 °C 160
T_A
Safe operating area I_D=f(V_DS)
parameter : D = 0.01, T_C=25°C
Drain current
I_D = ƒ(T_A)
parameter: V_GS ^≥ 10 V
0.11
A
I_D ^0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
20 40 60 80 100 120 °C 160
T_A
Drain-source breakdown voltage
V_(BR)DSS = ƒ(T_j)
Semiconductor Group
710
V
680
V_(BR)DSS
660
640
620
600
580
560
540
-60
-20
20
60
100 °C 160
T_j
5
12/05/1997