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| BSS125 Datasheet, PDF (1/7 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode) | |||
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BSS 125
SIPMOS ® Small-Signal Transistor
⢠N channel
⢠Enhancement mode
⢠VGS(th) = 1.5 ...2.5 V
Type
BSS 125
Type
BSS 125
BSS 125
BSS 125
VDS
600 V
ID
0.1 A
Ordering Code
Q62702-S021
Q67000-S008
Q67000-S233
Pin 1
G
Pin 2
D
RDS(on)
45 â¦
Package
TO-92
Tape and Reel Information
E6288
E6296
E6325
Marking
SS125
Pin 3
S
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kâ¦
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 35 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Semiconductor Group
1
Values
Unit
600
V
600
± 14
± 20
A
0.1
0.4
W
1
12/05/1997
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