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| BSP125 Datasheet, PDF (5/9 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode) | |||
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BSP 125
Power dissipation
Ptot = Æ(TA)
2.0
W
Ptot
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 °C 160
TA
Safe operating area ID=f(VDS)
parameter : D = 0, TC=25°C
Drain current
ID = Æ(TA)
parameter: VGS ⥠10 V
0.13
A
0.11
ID 0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0
20 40 60 80 100 120 °C 160
TA
Transient thermal impedance
Zth JA = Æ(tp)
parameter: D = tp / T
10 2
K/W
ZthJC
10 1
10 0
Semiconductor Group
10 -1
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -4
10 -8
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2 10 -1s 10 0
tp
5
Sep-12-1996
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