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BSP125 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode)
BSP 125
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• VGS(th) = 1.5 ...2.5 V
Type
BSP 125
Type
BSP 125
BSP 125
VDS
600 V
ID
0.12 A
Ordering Code
Q62702-S654
Q67000-S284
Pin 1 Pin 2 Pin 3 Pin 4
G
D
S
D
RDS(on)
45 Ω
Package
SOT-223
Tape and Reel Information
E6327
E6433
Marking
BSP 125
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 kΩ
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 39 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Values
Unit
600
V
600
± 14
± 20
A
0.12
0.48
W
1.7
Semiconductor Group
1
Sep-12-1996