BSM300GA170DN2E3166 Datasheet, PDF (5/9 Pages) Siemens Semiconductor Group – IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)

BSM300GA170DN2 E3166
Typ. output characteristics
I_C = f (V_CE)
parameter: t_p = 80 µs, T_j = 25 °C
600
A
500
17V
15V
I_C
13V
450
11V
9V
400
7V
350
300
250
200
150
100
50
0
0.0 1.0 2.0 3.0 4.0
V
6.0
V_CE
Typ. transfer characteristics
I_C = f (V_GE)
parameter: t_p = 80 µs, V_CE = 20 V
1200
A
1000
I_C
900
800
700
600
500
400
300
200
100
0
0
2
4
6
8 10 V 14
V_GE
Typ. output characteristics
I_C = f (V_CE)
parameter: t_p = 80 µs, T_j = 125 °C
600
A
500
17V
15V
I_C
13V
450
11V
9V
400
7V
350
300
250
200
150
100
50
0
0.0 1.0 2.0 3.0 4.0
V
6.0
V_CE
Semiconductor Group
5
Jul-31-1996