BSM300GA170DN2E3166 Datasheet, PDF (1/9 Pages) Siemens Semiconductor Group – IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)

BSM300GA170DN2 E3166
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Enlarged diode area
• Package with insulated metal base plate
• R_{G on,min} = 5.6 Ohm
Type
V_CE I_C
Package
BSM300GA170DN2 E3166 1700V 440A SINGLE SWITCH 1
Ordering Code
C67070-A2710-A67
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R_GE = 20 kΩ
Gate-emitter voltage
DC collector current
T_C = 25 °C
T_C = 80 °C
Pulsed collector current, t_p = 1 ms
T_C = 25 °C
T_C = 80 °C
Power dissipation per IGBT
T_C = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
V_CE
V_CGR
V_GE
I_C
I_Cpuls
P_tot
T_j
T_stg
R_thJC
R_thJCD
V_is
-
-
-
-
Values
Unit
1700
V
1700
± 20
A
440
300
880
600
W
2500
+ 150
°C
-55 ... + 150
≤ 0.05
K/W
≤ 0.1
4000
Vac
20
mm
11
F
-
55 / 150 / 56
Semiconductor Group
1
Jul-31-1996