BFS481 Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)

BFS 481
Collector-base capacitance C_cb = f (V_CB)
V_BE = v_be = 0, f = 1MHz
0.40
pF
C_cb
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
V 22
V_R
22
dB
G
18
10V
5V
16
3V
14
2V
12
10
1V
8
0.7V
6
4
0
5
10
15
mA
25
I_C
Transition frequency f_T = f (I_C)
V_CE = Parameter
9
GHz
f_T
7
6
10V
8V
5
5V
4
3
2
1
0
0
4
8
12
16
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
3V
2V
1V
0.7V
mA 24
I_C
16
dB
G
12
10V
5V
10
3V
8
2V
6
4
1V
2
0.7V
0
0
5
10
15
mA
25
I_C
Semiconductor Group
5
Dec-16-1996