BFS481 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA)

NPN Silicon RF Transistor
• For low-noise, high-gain broadband amplifier
at collector currents from 0.5 to 12 mA
• f_T = 8 GHz
F = 1.4 dB at 900 MHz
• Two (galvanic) internal isolated
Transistors in one package
BFS 481
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
BFS 481 RFs
Q62702-F1572
1/4 = B 2/5 = E 3/6 = C
Package
SOT-363
data below is of a single transistor
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S ≤ 83 °C
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ¹⁾
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
1) T_S is measured on the collector lead at the soldering point to the pcb.
Values
12
20
20
2
20
2
175
150
- 65 ... + 150
- 65 ... + 150
≤ 380
Unit
V
mA
mW
°C
K/W
Semiconductor Group
1
Dec-16-1996