BPW33 Datasheet, PDF (4/4 Pages) Siemens Semiconductor Group – Silizium-Fotodiode, Silicon Photodiode

BPW 33
Relative spectral sensitivity
S_rel = f (λ)
100
OHF00062
S _{rel %}
80
60
40
20
0
400 600 800
Dark current
I_R = f (V_R), E = 0
80
Ι _{R pA}
60
1000 nm 1200
λ
OHF00073
40
20
0
0 1 2 3 4 5 6 7 8 V 10
V_R
Photocurrent I_P = f (E_v), V_R = 5 V
Open-circuit voltage V_O = f (E_v)
10 ³
µA
Ι_P
OHF01064 _{10 4}
mV
V_O
Total power dissipation
P_tot = f (T_A)
160
P_tot
mW
140
OHF00958
10 ²
10 ³
120
V_O
100
10 ¹
10 ²
80
Ι_P
60
10 ⁰
10 ¹
40
10
-1
10
0
10 ¹
10 ²
10 ⁰
10 ³ lx 10 ⁴
E_e
Capacitance
C = f (V_R), f = 1 MHz, E = 0
1000
OHF01065
C pF
800
700
600
500
400
300
200
100
0
10
-2
10 ^-1
10 ⁰
10 ¹ V 10 ²
V_R
20
00
20 40 60 80 ˚C 100
T_A
Dark current
I_R = f (T_A), V_R = 1 V, E = 0
10 ⁴
Ι _R ^pA
OHF00075
10 ³
10 ²
10 ¹
10 ⁰ ₀
20 40 60 80 ˚C 100
T_A
Directional characteristics S_rel = f (ϕ)
40
30
20
10
0
ϕ
1.0
50
0.8
60
0.6
OHF01402
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20 40 60 80 100 120
Semiconductor Group
4
1997-11-19