BPW33 Datasheet, PDF (3/4 Pages) Siemens Semiconductor Group – Silizium-Fotodiode, Silicon Photodiode

BPW 33
Kennwerte (T_A = 25 °C, Normlicht A, T = 2856 K)
Characteristics (T_A = 25 °C, standard light A, T = 2856 K) (cont’d)
Bezeichnung
Description
Spektrale Fotoempfindlichkeit, λ = 850 nm
Spectral sensitivity
Quantenausbeute, λ = 850 nm
Quantum yield
Leerlaufspannung, E_v = 1000 Ix
Open-circuit voltage
Kurzschlußstrom, E_v = 1000 Ix
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R_L = 1 kΩ; V_R = 5 V; λ = 850 nm; I_p = 70 µA
Durchlaßspannung, I_F = 100 mA, E = 0
Forward voltage
Kapazität, V_R = 0 V, f = 1 MHz, E = 0
Capacitance
Temperaturkoeffizient von V_O
Temperature coefficient of V_O
Temperaturkoeffizient von I_SC
Temperature coefficient of I_SC
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V_R = 1 V, λ = 850 nm
Nachweisgrenze, V_R = 1 V, λ = 850 nm
Detection limit
Symbol
Symbol
S_λ
η
V_O
I_SC
t_r, t_f
V_F
C₀
TC_V
TC_I
NEP
D*
Wert
Value
0.59
0.86
440 (≥ 375)
72
1.5
1.3
630
– 2.6
0.2
4.3 × 10^{– 15}
6.3 × 10¹³
Einheit
Unit
A/W
Electrons
Photon
mV
µA
µs
V
pF
mV/K
%/K
W
√Hz
cm · √Hz
W
Semiconductor Group
3
1997-11-19