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| BP104S Datasheet, PDF (4/4 Pages) Siemens Semiconductor Group – Neu: Silizium-PIN-Fotodiode, New: Silicon PIN Photodiode | |||
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BP 104 S
Relative spectral sensitivity
Srel = f (λ)
100
OHF00078
S rel %
80
60
40
20
0
400 500 600 700 800 900 nm 1100
λ
Dark current
IR = f (VR), E = 0
10 2
nA
ÎR
OHF02284
10 1
Photocurrent IP = f (Ev), VR = 5 V
Open-circuit voltage VO = f (Ev)
10 3
µA
ÎP
OHF02283 10 4
mV
V
10 2
10 3
VO
10 1
ÎP
10 2
10 0
10 1
10 -1
10 0
10 0
10 1
10 2
10 3 lx 10 4
EV
Capacitance
C = f (VR), f = 1 MHz, E = 0
60
OHF01778
C pF
50
40
Total power dissipation Ptot = f (TA)
160
Ptot
mW
140
OHF00958
120
100
80
60
40
20
00
20 40 60 80 ËC 100
TA
Dark current
IR = f (TA), VR = 10 V, E = 0
10 3
Î R nA
OHF00082
10 2
30
10 1
10 0
10 -1
0 2 4 6 8 10 12 14 16 V 20
VR
20
10
0
10 -2
10 -1
10 0
10 1 V 10 2
VR
10 0
10 -1
0
20 40 60 80 ËC 100
TA
Directional characteristics Srel = f (Ï)
40
30
20
10
0
Ï
1.0
50
0.8
60
0.6
OHF01402
70
0.4
80
0.2
0
90
100
1.0
0.8
0.6
0.4
0
20 40 60 80 100 120
Semiconductor Group
4
1997-11-19
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