BAT15-099 Datasheet, PDF (4/4 Pages) Siemens Semiconductor Group – Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type)

BAT 15-099
S11-Parameters
Typical impedance characteristics (with external bias I and Z0 = 50 Ω)
f
I = 0.02 mA I = 0.05 mA I = 0.1 mA
I = 0.2 mA
I = 0.5 mA
GHz MAG ANG MAG ANG MAG ANG MAG ANG MAG ANG
1 0.94 – 16.4 0.87 – 16.6 0.77 – 16.4 0.59 – 17.2 0.19 – 16.7
2 0.93 – 33.8 0.88 – 33.8 0.77 – 34.5 0.58 – 35.2 0.15 – 36.1
3 0.92 – 53.8 0.86 – 54.5 0.75 – 54.1 0.58 – 56.1 0.13 – 64.8
4 0.91 – 74.3 0.84 – 75.3 0.72 – 76.4 0.51 – 78.4 0.11 – 104.8
5 0.91 – 96.6 0.84 – 97.6 0.72 – 99.1 0.53 – 102.3 0.15 – 135.7
6 0.91 – 115.4 0.84 – 116.7 0.73 – 118.7 0.53 – 122.9 0.18 – 160.9
7 0.91 – 131.0 0.84 – 132.3 0.73 – 134.1 0.54 – 138.1 0.20 – 168.8
8 0.91 – 143.0 0.84 – 144.5 0.73 – 146.8 0.55 – 150.5 0.81 + 179.4
9 0.91 – 155.6 0.83 – 150.2 0.71 – 159.7 0.53 – 163.9 0.18 + 179.4
10 0.90 – 167.3 0.83 – 169.7 0.71 – 178.8 0.51 – 175.8 0.14 + 151.2
11 0.89 + 175.5 0.80 + 172.6 0.70 + 170.0 0.45 + 164.9 0.09 + 105.5
12 0.88 + 175.5 0.76 + 146.5 0.62 + 142.8 0.39 + 134.2 0.14 + 43.6
S11 = f (f, I)
Semiconductor Group
4