BAT15-099 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type)

BAT 15-099
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Breakdown voltage
V(BR)
IR = 5 µA
Forward voltage
VF
IF = 1 mA
IF = 10 mA
Forward voltage matching
∆VF
IF = 10 mA
Diode capacitance
CT
VR = 0, f = 1 MHz
Forward resistance
RF
IF = 10 mA/50 mA
min.
4
Values
Unit
typ.
max.
–
–
V
–
0.23
–
–
0.32
–
–
–
20
mV
–
–
0.35
pF
–
5.5
–
Ω
Semiconductor Group
2