BAT14-098 Datasheet, PDF (4/4 Pages) Siemens Semiconductor Group – Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)

BAT 14-098
S11-Parameters
Typical impedance characteristics (with external bias I and Z0 = Ω)
f
I = 0.02 mA
GHz MAG ANG
I = 0.05 mA
MAG ANG
I = 0.1 mA
MAG ANG
I = 0.2 mA
MAG ANG
I = 0.5 mA
MAG ANG
1 0.95 – 12.5 0.87 – 12.7 0.77 – 12.8 0.58 – 12.5 0.20 – 3.4
2 0.94 – 26.0 0.87 – 26.3 0.78 – 26.5 0.58 – 25.7 0.16 – 5.0
3 0.93 – 42.3 0.85 – 43.0 0.73 – 43.2 0.53 – 42.4 0.12 – 0.1
4 0.92 – 61.0 0.82 – 62.2 0.68 – 63.2 0.44 – 62.1 0.07 27.5
5 0.90 – 84.9 0.79 – 86.8 0.64 – 88.8 0.38 – 91.6 0.09 79.8
6 0.88 – 110.4 0.76 – 113.6 0.59 – 117.2 0.31 – 125.3 0.19 85.0
7 0.85 – 139.0 0.72 – 143.2 0.55 – 148.5 0.28 – 165.1 0.26 80.1
8 0.84 – 167.2 0.73 – 172.1 0.56 – 179.3 0.32 157.8 0.33 71.5
9 0.84 159.8 0.71 153.9 0.55 145.4 0.37 121.1 0.41 61.3
10 0.86 128.7 0.75 122.9 0.62 114.7 0.46
93.6 0.49 49.5
11 0.88
95.4 0.79
90.3 0.69
83.7 0.57
69.0 0.58 38.5
12 0.92
67.3 0.86
63.9 0.78
59.4 0.69
49.7 0.67 28.6
S11 = f (f, I)
Semiconductor Group
4