BAT14-098 Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)

BAT 14-098
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
Symbol
Breakdown voltage
VBR
IR = 5 µA
Forward voltage
VF
IF = 1 mA
IF = 10 mA
Forward voltage matching
∆VF
IF = 10 mA
Diode capacitance
CT
VR = 0, f= 1 MHz
Forward resistance
RF
IF = 10 mA / 50 mA
min.
4
Values
Unit
typ.
max.
–
–
V
–
0.43
–
–
0.55
–
–
–
10
mV
–
–
0.35
pF
–
5.5
–
Ω
Semiconductor Group
2