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BAS70-07W Datasheet, PDF (4/4 Pages) Siemens Semiconductor Group – Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing)
BAS70-07W
Forward current IF = f (VF)
TA = Parameter
Reverse current IR = f (VR)
TA = Parameter
10 2 BAS 70W/BAS 170W
Ι F mA
10 1
EHB00042
10 0
10 -1
TA = -40 C
25 C
85 C
150 C
10 2 BAS 70W/BAS 170W
ΙR µA
10 1
10 0
10 -1
10 -2
EHB00043
TA = 150 C
85 C
25 C
10 -2
0.0
0.5
1.0
Diode capacitance CT = f (VR)
f = 1MHz
V 1.5
VF
10 -3
0
20
40
60 V 80
VR
Differential forward resistance rf = f (IF)
f = 10 kHz
2.0 BAS 70W/BAS 170W
C T pF
1.5
1.0
0.5
EHB00044
10 3 BAS 70W/BAS 170W
rf Ω
10 2
10 1
EHB00045
0.0
10 0
0
20
40
60 V 80
0.1
1
10 mA 100
VR
ΙF
SSeemmicioconndduuctcotor rGGrorouupp
44
Ma 1-29968--11919-081