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| BAS70-07W Datasheet, PDF (2/4 Pages) Siemens Semiconductor Group – Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) | |||
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BAS70-07W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC characteristics
Breakdown voltage
I(BR) = 10 µA
Reverse current
VR = 50 V
VR = 70 V
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 15 mA
V(BR)
IR
VF
70
-
-V
-
-
µA
0.1
10
V
300 375 410
600 705 750
750 880 1000
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Charge carrier life time
IF = 25 mA
Differential forward resistance
IF = 10 mA, f = 10 kHz
Series inductance
CT
-
1.5
2 pF
Ï
-
- 100 ps
rf
-
34
-â¦
Ls
-
2
- nH
SSeemmicioconndduuctcotor rGGrorouupp
22
Ma 1-29968--11919-081
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