BAR80 Datasheet, PDF (4/4 Pages) Siemens Semiconductor Group – Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)

Permissible pulse load R_thJS = f (t_p)
K/W
R _thJS
BAR 80
Permissible pulse load I_Fmax / I_FDC = f (t_p)
_^I _^F_^m_^a_^x__
I_{F DC}
t_p
t
p
Semiconductor Group
4
Edition A02, 27.02.95