BAR80 Datasheet, PDF (1/4 Pages) Siemens Semiconductor Group – Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)

Silicon RF Switching Diode
l Design for use in shunt configuration
l Hight shunt signal isolation
l Low shunt insertion loss
BAR 80
Type
BAR 80
Marking
AAs
Ordering code
(tape and reel)
Q62702-A1084
Pin configuration
1
23
CAC
Package ¹⁾
4
A MW-4
Maximum ratings
Parameter
Reverse voltage
Forward current
Operating temperature range
Storage temperature range
Symbol
VR
IF
Top
Tstg
BAR 80
Unit
35
V
100
mA
-55...+125
°C
-55...+150
°C
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A02, 27.02.95