CLY5 Datasheet, PDF (3/8 Pages) Siemens Semiconductor Group – GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)

GaAs FET
CLY 5
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Compression Power vs. Drain-Source Voltage
f = 1.8GHz; IDS=0.5IDSS
P1dB
η_D
40
80
[dBm]
[%]
35
70
30
60
25
50
20
40
15
30
10
20
5
10
0
0
0 1 2 3 4 5 6 7[V] 8
Drain-Source Voltage
Gain
P1dB
16
[dB]
14
12
10
2.0
[W]
1.75
1.5
1.25
8
1.0
6
0.75
4
0.5
2
0.25
0
0
0 1 2 3 4 5 6 7[V] 8
Drain-Source Voltage
0,9
0,7
0,5
0,3
0,1
0
0
Output Characteristics
PtotDC
VGS = 0V
VGS = -0.5V
VGS = -1V
VGS = -1.5V
VGS = -2V
1
2
3
4
5
6
Drain-Source Voltage [V]
Siemens Aktiengesellschaft
pg. 3/8
17.12.96
HL EH PD21