CLY5 Datasheet, PDF (2/8 Pages) Siemens Semiconductor Group – GaAs FET (Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz)

GaAs FET
CLY 5
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Electrical characteristics (T_A = 25°C , unless otherwise specified)
Characteristics
Symbol min
typ
max Unit
Drain-source saturation current
V_DS = 3 V V_GS = 0 V
Drain-source pinch-off current
V_DS = 3 V V_GS = -3.8 V
Gate pinch-off current
V_DS = 3 V V_GS = -3.8 V
Pinch-off Voltage
V_DS= 3 V I_D=100µA
Small Signal Gain*)
V_DS = 3 V I_D = 350 mA
Pin = 0 dBm
Small Signal Gain*)
f = 1.8 GHz
V_DS = 5 V I_D = 350 mA
Pin = 0 dBm
Small Signal Gain **)
f = 1.8 GHz
V_DS = 3 V I_D = 350 mA
Pin = 0 dBm
Output Power
f = 1.8 GHz
V_DS = 3 V I_D = 350 mA
Pin = 19 dBm
Output Power
f = 1.8 GHz
V_DS = 5 V I_D = 350 mA f = 1.8 GHz
Pin = 21 dBm
1dB-Compression Point
V_DS = 3 V I_D = 350 mA f = 1.8 GHz
1dB-Compression Point
V_DS = 5 V I_D = 350 mA f = 1.8GHz
Power Added Efficiency
V_DS = 5 V I_D = 350 mA f = 1.8 GHz
Pin = 21 dBm
I_DSS
I_D
I_G
VGS(p)
G
G
Gp
P_o
P_o
P_1dB
P_1dB
PAE
600
-
-
-3.8
10.5
11.5
9.0
26.5
29.5
-
-
40
800
10
5
-2.8
11.0
12.0
9.5
27
30
26.5
30
55
1200 mA
100
µA
20
µA
-1.8
V
-
dB
-
dB
-
dB
-
dBm
-
dBm
-
dBm
-
dBm
-
%
*) Matching conditions for maximum small signal gain (not identical with power matching conditions!)
**) Power matching conditions: f=1.8GHz:
Source Match: Γ_ms : MAG 0.58; ANG -143°; Load Match: Γ_ml : MAG 0.76; ANG -116°
Siemens Aktiengesellschaft
pg. 2/8
17.12.96
HL EH PD21