BXY42BA-S Datasheet, PDF (3/3 Pages) Siemens Semiconductor Group – Silicon PIN Diodes (Beam lead version Fast switching)

BXY 42BA-S
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Breakdown voltage
IR = 10 µA
Forward voltage
IF = 50 mA
Reverse current
VR = 20 V
Storage time
IF = 10 mA, VR = 10 V
Diode capacitance
VR = 20 V, f = 1 MHz
Charge carrier life time
IF = 10 mA, IR = 6 mA
Forward resistance
f = 100 MHz, IF = 10 mA
Symbol
min.
V(BR)
30
Values
typ. max.
–
–
Unit
V
VF
–
1.1 –
IR
–
–
5
nA
ts
–
2
–
ns
CT
–
–
0.15 pF
τL
–
20 –
ns
rf
–
1.3 –
Ω