BXY42BA-S Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon PIN Diodes (Beam lead version Fast switching)

BXY 42BA-S
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
Breakdown voltage
IR = 10 µA
Forward voltage
IF = 50 mA
Reverse current
VR = 40 V
Storage time
IF = 10 mA, VR = 10 V
Diode capacitance
VR = 30 V, f = 1 MHz
Charge carrier life time
IF = 10 mA, IR = 6 mA
Forward resistance
f = 100 MHz, IF = 10 mA
Symbol
min.
V(BR)
50
Values
typ. max.
–
–
Unit
V
VF
–
1.0 –
IR
–
–
5
nA
ts
–
3
–
ns
CT
–
–
0.08 pF
τL
–
30 –
ns
rf
–
1.8 –
Ω