BPX90 Datasheet, PDF (3/5 Pages) Siemens Semiconductor Group – Silizium-Fotodiode Silicon Photodiode

BPX 90
BPX 90 F
Kennwerte T_A = 25 °C
Characteristics (cont’d)
Bezeichnung
Description
Halbwinkel
Half angle
Dunkelstrom, V_R = 10 V
Dark current
Spektrale Fotoempfindlichkeit, λ = 950 nm
Spectral sensitivity
Quantenausbeute, λ = 950 nm
Quantum yield
Leerlaufspannung
Open-circuit voltage
E_v = 1000 Ix, Normlicht/standard light A,
T = 2856 K
E_e = 0.5 mW/cm², λ = 950 nm
Kurzschlußstrom
Short-circuit current
E_v = 1000 Ix, Normlicht/standard light A,
T = 2856 K
E_e = 0.5 mW/cm², λ = 950 nm
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R_L = 1 kΩ; V_R = 5 V; λ = 850 nm; I_p = 30 µA
Durchlaßspannung, I_F = 80 mA, E = 0
Forward voltage
Kapazität, V_R = 0 V, f = 1 MHz, E = 0
Capacitance
Symbol
Symbol
Wert
Value
BPX 90
BPX 90 F
ϕ
± 60
± 60
I_R
5 (≤ 180) 5 (≤ 180)
Einheit
Unit
Grad
deg.
nA
S_λ
0.48
0.48
A/W
η
0.62
0.62
Electrons
Photon
V_O
450 (≥ 380) –
mV
V_O
–
400 (≥ 340) mV
I_SC
45
–
µA
I_SC
–
13
µA
t_r, t_f
1.3
1.3
µs
V_F
1.3
1.3
V
C₀
430
430
pF
Semiconductor Group
3